4英寸立方SiC单晶生长技术研究
Release time:2026-09-16
Hits:
- Status:
- 结题
- Classification of Project:
- 北京市科技计划
- Sub-Class of Project:
- Science and technology
- Project level:
- Provincial and ministerial-level
- Scheduled completion time:
- 2023-01-01
- Date of Project Initiation:
- 2025-12-31
- Subsidy Amount:
- 80.0
- Pre One:具有高导电特性的过渡金属碲化物拓扑半金属电催化性能研究
- Next One:Z型光催化体系的设计及应用
